![RJP30H2A](https://vielectronics.pt/26-large_default/rjp30h2a.jpg)
![RJP30H2A](https://vielectronics.pt/26-large_default/rjp30h2a.jpg)
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Envios Internacionais entre 5-10 dias
Não aceitamos a devolução de Placas Electrónicas
Type Designator: RJP30H2A
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 60
Maximum Collector-Emitter Voltage |Vce|, V: 360
Collector-Emitter saturation Voltage |Vcesat|, V: 1.9
Maximum Gate-Emitter Voltage |Veg|, V: 30
Maximum Collector Current |Ic|, A: 35
Maximum Junction Temperature (Tj), °C: 150
Rise Time, nS: 180
Maximum Collector Capacity (Cc), pF: 60
Package: TO263